Microcomputer simulation of semiconductor junction characteristics

Simulation of Semiconductor Nanostructures

We employ density functional and quantum Monte Carlo calculations to show that significant changes occur in the optical gap of fully hydrogenated nanoclusters when the surface contains impurity passivants such as atomic oxygen. Our results show that quantum confinement is only one mechanism responsible for visible photoluminescence in silicon nanoclusters and that the specific surface chemistry...

Proximity effect in planar Superconductor/Semiconductor junction

We have measured the very low temperature (down to 30mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer I stands for the Schottky barrier). As the temperature is lowered below the gap, the resistance increases as expected in SIN junction. Around 300mK, the resistance shows a maximum and decreases at lower...

Josephson Current in a Ferromagnetic Semiconductor/Semiconductor/Ferromagnetic Semiconductor Junction with Superconducting Contacts

Qualitative Simulation of Semiconductor Fabrication

As part of a larger effort aimed at providing symbolic, computer-aided tools for semiconductor fabrication experts, we have developed qualitative models of the operations performed during semiconductor manufacture. By qualitatively simulating a sequence of these modele we generate a description of how a wafer is affected by the operations. This description encodes the entire history of processi...

Numerical Simulation of Semiconductor Devices

The state of the art in self-consistent numerical modeling of semiconductor devices is reviewed. The physical assumptions which are required to describe carrier transport are discussed. Particular emphasis is put on the models for space charge, carrier mobility, carrier temperature, and carrier generationrecombination. Investigations about three-dimensional effects due to the field oxide in MOS...